FRAM click brings 256K (32,768 words x 8 bits) of Ferroelectric Random Access Memory to your design. It features MB85RS256A module which uses the ferroelectric process and silicon gate CMOS technologies for forming the nonvolatile memory cells. It is able to retain data without using a back-up battery. The memory can be used for 10 bilion read/write operations and does not take long time to write data unlike Flash memories or EEPROM. It uses SPI to communicate with the target device. Maximum operating frequency is 25MHz. The board is designed to use 3.3V power supply only.
Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the resume data, etc.
256K (32,768 words x 8 bits) of Ferroelectric RAM memory. High endurance: 10 Billion Read/Writes
Is able to retain data without using a back-up battery